Product Summary

The VN02H is a monolithic devices made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status

Parametrics

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Breakdown Voltage 60 V
IOUT Output Current (cont.) 6 A
IR Reverse Output Current -6 A
IIN Input Current ±10 mA
VCC Supply Voltage (for t = 400 ms) 60 V
-VCC Reverse Supply Voltage -4 V
ISTAT Status Current ±10 mA
VESD Electrostatic Discharge (1.5 kW, 100 pF) 2000 V
Ptot Power Dissipation at Tc 3 25 oC 28 W
Tj Junct ion Operating Temperature -40 to 150 oC
Ts tg Storage Temperature -55 to 150 oC

Features

The VN02H is a 2-input CMOS exclusive-OR gate, manufactured using silicon gate CMOS fabrication. CMOS low power circuit operation makes high speed LS-TTL operations achievable. With a wave forming buffer connected internally, stabilized output can be achieved as the circuit offers high noise immunity. As the VN02H is integrated into mini molded, SSOT-25 and SOT- 25 packages, high density mounting is possible.

Diagrams

<IMG src="http://www.seekic.com/uploadfile/ic-mfg/20127223029646.jpg" border=0>

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
VN02H
VN02H

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VN02H(011Y)
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Data Sheet

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VN02H(012Y)
VN02H(012Y)

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Data Sheet

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VN02H-11-E
VN02H-11-E

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Data Sheet

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VN02H-12-E
VN02H-12-E

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Power Driver ICs Hi SIDE SMART Pwr SOLID STATE RELAY

Data Sheet

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VN02H-E
VN02H-E

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Data Sheet

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VN02HSP
VN02HSP

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Data Sheet

0-560: $1.08
560-1000: $0.79
1000-2000: $0.74
VN02HSP-E
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Data Sheet

0-310: $1.13
310-500: $1.00
500-1000: $0.82
1000-2000: $0.77