(China (Mainland))
Product Summary
The RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. It is suitable for output stage of high power amplifiers in HF band mobile radio sets.
Parametrics
RD16HHF1 absolute maximum ratings: (1)VDSS, Drain to source voltage: 50 V; (2)VGSS, Gate to source voltag: +/- 20 V; (3)Pch, Channel dissipation: 56.8 W; (4)Pin, Input power: 0.8 W; (5)ID, Drain to source current: 5 A; (6)Tch, Channel temperature: 150 ℃; (7)Tstg, Storage temperature: -40 to +150℃; (8)Rth j-c, Thermal resistance: 2.2℃ /W.
Features
RD16HHF1 features: (1)High power gain: Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz.
Diagrams
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RD16A12-08-S6 |
TE Connectivity / Raychem |
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RD16A12-08-S7 |
TE Connectivity / Raychem |
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RD16A12-08-S7-00 |
TE Connectivity |
Standard Circular Connectors RD16A12-08-S7-00 |
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RD16A12-08-S8 |
TE Connectivity / Raychem |
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RD16A12-08-S8-00 |
TE Connectivity |
Standard Circular Connectors RD16A12-08-S8-00 |
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RD16A12-08-SN |
TE Connectivity / Raychem |
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