(China (Mainland))
Product Summary
The MBR4015LW employs the Schottky Barrier principle in a large area metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. The MBR4015LW is ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
Parametrics
MBR4015LW absolute maximum ratings: (1)Peak Repetitive Reverse Voltage, VRRM: 15V; (2)Working Peak Reverse Voltage, VRWM: 15V; (3)DC Blocking Voltage, VR: 15V; (4)Average Rectified Forward Current, Per Diode,Io: 20 Amp; (5)Average Rectified Forward Current, Per Device,Io: 40 Amp; (6)Peak Repetitive Forward Current, Per Diode, IFRM: 40 Amp; (7)Non Repetitive Peak Surge Current, IFSM: 400Amp; (8)Peak Repetitive Reverse Current (2.0 μs, 1.0 kHz), IRRM: 2.0 Amp; (9)Operating Junction Temperature, TJ: –65 to +150℃; (10)Storage Temperature, Tstg: –65 to +150℃; (11)Peak Surge Junction Temperature, TJ(pk): 150℃; (12)Voltage Rate of Change, dv/dt: 10000 V/μs.
Features
MBR4015LW features: (1)Highly Stable Oxide Passivated Junction; (2)Guardring for Overvoltage Protection; (3)Low Forward Voltage Drop; (4)Dual Diode Construction; (5)Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating.; (6)Full Electrical Isolation without Additional Hardware; (7)Pb-Free Package is Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MBR4015LWD |
Other |
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Data Sheet |
Negotiable |
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MBR4015LWT |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 40A 15V |
Data Sheet |
Negotiable |
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MBR4015LWTG |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 40A 15V |
Data Sheet |
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