(China (Mainland))
Product Summary
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445C) with the common base connected to the
flange.
Parametrics
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 75 V
VCES collector-emitter voltage RBE = 0 - 75 V
VEBO emitter-base voltage open collector - 2 V
ICM peak collector current tp ￡ 100 ms; d ￡ 10% - 1.5 A
Ptot total power dissipation tp = 100 ms; d = 10%; Th = 25 °C - 34 W
Tstg storage temperature -65 +200 °C
Tj operating junction temperature - 200 °C
Tsld soldering temperature up to 0.2 mm from ceramic cap; t ￡ 10 s - 235 °C
Features
· Suitable for short and medium pulse applications
· Internal input and output matching networks for an easy
circuit design
· Emitter ballasting resistors improve ruggedness
· Gold metallization ensures excellent reliability
· Interdigitated emitter-base structure provides high
emitter efficiency
· Multicell geometry improves power sharing and reduces
thermal resistance.
Diagrams
<P><IMG src="http://www.seekic.com/uploadfile/ic-mfg/201272224924714.jpg" border=0></P>
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLS3135-20 |
Other |
|
Data Sheet |
Negotiable |
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|
BLS3135-20 TRAY |
NXP Semiconductors |
Transistors RF Bipolar Power BULKTR TNS-MICL |
Data Sheet |
Negotiable |
|
||||
|
BLS3135-20,114 |
NXP Semiconductors |
Transistors RF Bipolar Power BULKTR TNS-MICL |
Data Sheet |
Negotiable |
|
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